Semiconductor device and its manufacturing method

半导体器件及其制造方法

Abstract

曝光形成抗蚀剂图形时,其微细化受到波长的界限。本发明能够超过该界限并形成出色而且干净的抗蚀剂图形。用第2抗蚀剂2覆盖在第1抗蚀剂图形1a上,曝光在第1抗蚀剂图形1a中产生酸,在界面上形成交联层4,形成比第1抗蚀剂图形1a粗的第2抗蚀剂图形2a。然后,通过用在水中溶入了有机溶剂的液体剥离第2抗蚀剂2,进而用水清洗,得到干净而且微细的抗蚀剂图形。由此,能够缩小抗蚀剂的通孔直径,缩小分离宽度。

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